| 전자부품 데이터시트 검색엔진 |
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TMS28F033 데이터시트(PDF) 39 Page - Texas Instruments |
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TMS28F033 데이터시트(HTML) 39 Page - Texas Instruments |
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39 / 52 page ![]() 18 17 16 15 14 13 12 11 10 D6 D7 9 8 7 6 5 4 3 2 1 CLK A–1–A16 (Word-Wide) E WR WE LBA D4 D2 D3 D1 D0 OE BAA QV DQ0–DQ7 and DQ24–DQ31 (Word-Wide) RY/BY VDDI/VDDE RP D5 A0 BASIC/ENHANCED PIN SET DCR0 OE MODE DCR1 WE MODE DCR2 DIS/WORD DCR3 LRV/BAA DCR4 BURST LENGTH DCR25,24 BURST LATENCY (X) DCR29,28 BURST LATENCY (Y) DCR30 x16 WRITE OPTION DCR31 Basic pin set (DCR0 = 0) 0 X 1 (see Note D) 1 (see Note E) 01 (see Note F) 11 (see Note G) 0 (see Note G) X Enhanced pin set (DCR0 = 1) 0 X 1 (see Note D) 1 (see Note E) 01 (see Note F) 11 (see Note G) 0 (see Note G) X NOTES: A. X is a don’t care. B. See Table 8 through Table 12 for DCR setting descriptions. C. Linear burst with the enhanced pin set requires LBO = VIL. D. 5–1– . . . –1 is available only with the 16-bit data bus, which requires DCR3 = 1 and WORD=VIL. E. For synchronous OE (DCR1 = 0), BAA is not required to burst if required to burst if OE is used to control the burst (DCR[29:28] = 00). F. 5–1– . . . –1 is available with MOD4, MOD8, MOD16, and MOD32. G. Linear MOD8 burst is available with 3–1– . . . –1, 4–1– . . . –1, 5–1– . . . –1, and 4–2– ...–2. Figure 16. 5–1–...–1 MOD8 Linear Burst With Device Configuration Register Settings ADVANCE INFORMATION |
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