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TMS28F033 데이터시트(PDF) 2 Page - Texas Instruments |
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TMS28F033 데이터시트(HTML) 2 Page - Texas Instruments |
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2 / 52 page ![]() TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY SMJS833 – NOVEMBER 1997 2 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 description (continued) The TMS28F033 flash memory requires 12 V for erasure and programming, and 5 V for memory-array access while interfacing with either a 3.3-V or 5-V bus. The TMS28F033 flash memory is fabricated using CMOS technology and is packaged in an 80-pin plastic quad flatpack (PQFP) (PAF suffix). device symbol nomenclature PAF Speed Option 25 = 25 MHz 33 = 33 MHz XB TMS28F033– Q Temperature Range L (Commercial) = 0 °C to 70°C E (Extended) = – 40 °C to 85°C Q (Automotive) = – 40 °C to 125°C Package Type PAF = 80-Pin Plastic Quad Flatpack Program/Erase Endurance B = 10 000 Cycles |
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