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STM32H723VG 데이터시트(PDF) 96 Page - STMicroelectronics

부품명 STM32H723VG
상세설명  32-bit Arm® Cortex®-M7 550 MHz MCU, up to 1 MB Flash memory, 564 KB RAM, 35 comms peripherals and analog interfaces
PDF  227 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32H723VG 데이터시트(HTML) 96 Page - STMicroelectronics

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Electrical characteristics
STM32H723xE/G
96/227
DS13313 Rev 2
6.3.6
Embedded USB regulator characteristics
The parameters given in Table 19 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 12: General operating
conditions.
6.3.7
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 11: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a CoreMark code.
VREFINT_DIV1 1/4 reference voltage
-
-
25
-
%
VREFINT
VREFINT_DIV2 1/2 reference voltage
-
-
50
-
VREFINT_DIV3 3/4 reference voltage
-
-
75
-
1.
The shortest sampling time for the application can be determined by multiple iterations.
2. Guaranteed by design.
3. Guaranteed by design. and tested in production at 3.3 V.
Table 17. Embedded reference voltage (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 18. Internal reference voltage calibration values
Symbol
Parameter
Memory address
VREFIN_CAL Raw data acquired at temperature of 30 °C, VDDA = 3.3 V
1FF1 E860 - 1FF1 E861
Table 19. USB regulator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREGOUTV33V
Regulated output voltage
-
3
-
3.6
V
IOUT
Output current load sinked by
USB block
--
-
20
mA
TWKUP
Wakeup time
-
-
120
170
us



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