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STM32H723VG 데이터시트(PDF) 102 Page - STMicroelectronics |
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STM32H723VG 데이터시트(HTML) 102 Page - STMicroelectronics |
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102 / 227 page ![]() Electrical characteristics STM32H723xE/G 102/227 DS13313 Rev 2 I/O system current consumption The current consumption of the I/O system has two components: static and dynamic. Table 26. Typical current consumption in Stop mode Symbol Parameter Conditions Typ Max(1) 1. Guaranteed by characterization results. Unit TJ = 25 °C TJ = 85 °C TJ = 105 °C TJ = 125 °C IDD(Stop) Supply current in Stop and DStop modes Flash memory in low power mode SVOS5 0.52 3.7 26 44 72 mA SVOS4 0.81 6.1 39 64 110 SVOS3 1.15 8.6 51 82 130 Flash memory in normal mode SVOS5 0.535 3.7 26 44 72 SVOS4 0.96 6.2 39 64 110 SVOS3 1.45 8.8 51 83 130 Table 27. Typical current consumption in Standby mode Symbol Parameter Conditions Typ(1) 1. These values are given for PDR OFF. When the PDR is ON, the typical current consumption is increased (refer to Table 16: Reset and power control block characteristics. Max at 3.6 V(2) 2. Guaranteed by characterization results. Unit Backup SRAM RTC and LSE(3) 3. The LSE is in Low-drive mode. 1.65 V 2.4 V 3 V 3.3 V TJ = 25 ° C TJ = 85 ° C TJ = 105 ° C TJ = 125 ° C IDD (Standby) Supply current in Standby mode, IWDG OFF OFF OFF 2.2 2.35 2.5 2.8 - - - - µA ON OFF 3.5 3.7 4 4.3 - - - - OFF ON 2.2 2.4 2.85 3.25 4.5 15 30 64 ON ON 3.5 3.8 4.35 4.75 8.3 39 75 140 Table 28. Typical and maximum current consumption in VBAT mode Sym- bol Para- meter Conditions Typ Max at 3.6 V(1)(2) 1. Guaranteed by characterization results. 2. The LDO regulator is used before switching to VBAT mode. Back-up SRAM RTC and LSE(3) 3. The LSE is in Low-drive mode. 1.2 V 2 V 3 V 3.3 V TJ = 2 5 °C TJ = 85 °C TJ = 105 ° C TJ = 125 ° C IDD (VBAT) Supply current in VBAT mode OFF OFF 0.008 0.01 0.025 0.05 0.3 3.1 7.4 18 ON OFF 1.5 1.7 1.9 1.9 4 28 53 91 OFF ON 0.4 0.5 0.75 0.8 - - - - ON ON 1.8 2.1 2.8 3.2 - - - - |
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