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STM32F730V8 데이터시트(PDF) 105 Page - STMicroelectronics |
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STM32F730V8 데이터시트(HTML) 105 Page - STMicroelectronics |
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105 / 202 page ![]() DS12536 Rev 2 105/202 STM32F730x8 Electrical characteristics 185 Table 33. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA =25 °C TA =85 °C TA =105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT= 3.3 V VBAT = 3.6 V IDD_VBAT Supply current in VBAT mode Backup SRAM OFF, RTC and LSE OFF 0.035 0.037 0.043 4 10 µA Backup SRAM ON, RTC and LSE OFF 0.69 0.71 0.73 9 20 Backup SRAM OFF, RTC ON and LSE in low drive mode 0.57 0.74 1.05 98 244 Backup SRAM OFF, RTC ON and LSE in medium low drive mode 0.59 0.76 1.08 101 251 Backup SRAM OFF, RTC ON and LSE in medium high drive mode 0.69 0.86 1.19 111 277 Backup SRAM OFF, RTC ON and LSE in high drive mode 0.8 0.98 1.31 122 305 Backup SRAM ON, RTC ON and LSE in low drive mode 1.22 1.41 1.74 162 405 Backup SRAM ON, RTC ON and LSE in Medium low drive mode 1.25 1.43 1.78 166 414 Backup SRAM ON, RTC ON and LSE in Medium high drive mode 1.46 1.65 2.01 187 468 Backup SRAM ON, RTC ON and LSE in High drive mode 1.46 1.65 2.01 187 468 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed by characterization results. |
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