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STM32F730V8 데이터시트(PDF) 131 Page - STMicroelectronics

부품명 STM32F730V8
상세설명  Arm® Cortex®-M7 32b MCUFPU, 462DMIPS, 64KB Flash /256164KB RAM, USB OTG HS/FS, 18 TIMs, 3 ADCs, 21 com IF
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STM32F730V8 데이터시트(HTML) 131 Page - STMicroelectronics

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DS12536 Rev 2
131/202
STM32F730x8
Electrical characteristics
185
Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
•
A supply overvoltage is applied to each power supply pin
•
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latchup standard.
6.3.19
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibilty to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –
5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency
deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
The test results are given in Table 60.
Table 58. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C conforming to
ANSI/ESDA/JEDEC JS-001-2012
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device model)
TA = +25 °C conforming to ANSI/ESD
STM5.3.1-2009, all the packages
excepted WLCSP100
3250
1. Guaranteed by characterization results.
Table 59. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +105 °C conforming to JESD78A
II level A



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