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STM32WLE4JC 데이터시트(PDF) 69 Page - STMicroelectronics

부품명 STM32WLE4JC
상세설명  Multiprotocol LPWAN 32-bit Arm® Cortex®-M4 MCUs, LoRa®, (G)FSK, (G)MSK, BPSK, up to 256KB Flash, 64KB SRAM
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32WLE4JC 데이터시트(HTML) 69 Page - STMicroelectronics

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DS13105 Rev 9
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STM32WLE5/E4xx
Electrical characteristics
133
Table 28. Sub-GHz radio power consumption in transmit mode
Symbol
Frequency band (MHz)
PA match (conditions)
Power output
Typ
Unit
IDD
868 to 915
Low power
(optimized for 14 dBm)
+14 dBm, VDDRF = 3.3 V
23.5
mA
+10 dBm, VDDRF = 3.3 V
17.5
+14 dBm, VDDRF = 1.8 V
41.5
+10 dBm, VDDRF = 1.8 V
28.5
Low power
(optimal settings)(1)
+15 dBm, VDDRF = 3.3 V
25.5
+10 dBm, VDDRF = 3.3 V
15
+15 dBm, VDDRF = 1.8 V
51
+10 dBm, VDDRF = 1.8 V
25
434 to 490
Low power
(optimized for 14 dBm)
+14 dBm, VDDRF = 3.3 V
22.5
+10 dBm, VDDRF = 3.3 V
13.5
+14 dBm, VDDRF = 1.8
39.5
+10 dBm, VDDRF = 1.8 V
22.5
Low power (optimal settings)
+15 dBm, VDDRF = 3.3 V
24.5
+10 dBm, VDDRF = 3.3 V
13.5
+15 dBm, VDDRF = 1.8 V
43
+10 dBm, VDDRF = 1.8 V
21.5
868 to 915
Low-power PA, SMPS OFF
+14 dBm, VDDRF = 3.3 V
45.5
434 to 490
43.5
868 to 915
High power
(optimized for 22 dBm)
+22 dBm, VDDRF = 3.3 V
120
+20 dBm, VDDRF = 3.3 V
107.5
+17 dBm, VDDRF = 3.3 V
98
+14 dBm, VDDRF = 3.3 V
92
High power (optimal settings)
+20 dBm, VDDRF = 3.3 V
92.5
+17 dBm, VDDRF = 3.3 V
58
+14 dBm, VDDRF = 3.3 V
45.5
434 to 490
High power
(optimized for 22 dBm)
+22 dBm, VDDRF = 3.3 V
110.5
+20 dBm, VDDRF = 3.3 V
90
+17 dBm, VDDRF = 3.3 V
71
+14 dBm, VDDRF = 3.3 V
59
High power (optimal settings)
+20 dBm, VDDRF = 3.3 V
72
+17 dBm, VDDRF = 3.3 V
43.5
+14 dBm, VDDRF = 3.3 V
38
1. Optimal settings can be used to optimize power consumption when the output power is NOT 22 dBm (high power) or
14 dBm (low power). In that case, a dedicated firmware configuration associated to a dedicated board matching network
(see AN5457 for details) corresponding to the custom output power, can be used.



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