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STM32WLE4JC 데이터시트(PDF) 96 Page - STMicroelectronics |
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STM32WLE4JC 데이터시트(HTML) 96 Page - STMicroelectronics |
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96 / 146 page ![]() Electrical characteristics STM32WLE5/E4xx 96/146 DS13105 Rev 9 For more information about the trimming methodology of the oscillator, refer to the application note HSE trimming for STM32 wireless MCUs (AN5042). For more information about the crystal selection, refer to the application note Oscillator design guide for STM8AF/AL/S, STM32 MCUs and MPUs (AN2867). TCXO regulator 5. Load capacitance can be managed by internal programmable capacitances at calibration phase. No need to add external foot capacitances. The values indicated take into account the combination of the two foot capacitances. Table 57. HSE32 oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit tSUA(HSE) Startup time for 80% amplitude stabilization VDDRF stabilized, SUBGHZ_HSEINTRIMR = 0x12, -40 to +105 °C temperature range -1000- µs tSUR(HSE) Startup time for HSEREADY signal VDDRF stabilized, SUBGHZ_HSEINTRIMR = 0x12, -40 to +105 °C temperature range - 180 - IDDRF(HSE) HSE32 current consumption HSEGMC = 000, SUBGHZ_HSEINTRIMR = 0x12 -50 - µA XOTg(HSE) SUBGHZ_HSEINTRIMR granularity Capacitor bank -1 5 ppm XOTfp(HSE) SUBGHZ_HSEINTRIMR frequency pulling ±15 ±30 - XOTnb(HSE) SUBGHZ_HSEINTRIMR number of tuning bits -6- bit XOTst(HSE) SUBGHZ_HSEINTRIMR setting time -- 0.1 ms Table 58. HSE32 TCXO regulator characteristics Symbol Parameter Conditions Min Typ Max Unit VTCXO Regulated voltage range for TCXO voltage supply VDDOP > VTCXO + 200 mV 1.6 1.7 3.3 V ILTCXO Load current for TCXO regulator - - 1.5 4 mA TSVTCXO Startup time for TCXO regulator From enable to regulated voltage within 25 mV from target - - 50 µs IDDTCXO Current consumption for TCXO regulator Quiescent current - - 70 µA Relative to load current - 1.6 2 % ATCXO Amplitude voltage for external TCXO applied to OSC_IN pin Provided through a 220 Ω resistor in series with a capacitance (voltage divider)(1) 0.4 0.6 1.2(2) Vpk-pk 1. In order to minimize spurious injection, the capacitance value must be calculated such that an amplitude of 0.4 to 0.5 Vpk-pk on OSC_IN is obtained. For TCXO output voltage of 0.8 Vpk-pk, 10 pF can be used. 2. Clipped-sine output TCXO is required, with the output amplitude not exceeding 1.2 V peak-to-peak. |
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