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STM32WLE4JC 데이터시트(PDF) 96 Page - STMicroelectronics

부품명 STM32WLE4JC
상세설명  Multiprotocol LPWAN 32-bit Arm® Cortex®-M4 MCUs, LoRa®, (G)FSK, (G)MSK, BPSK, up to 256KB Flash, 64KB SRAM
PDF  146 Pages
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STM32WLE4JC 데이터시트(HTML) 96 Page - STMicroelectronics

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Electrical characteristics
STM32WLE5/E4xx
96/146
DS13105 Rev 9
For more information about the trimming methodology of the oscillator, refer to the
application note HSE trimming for STM32 wireless MCUs (AN5042).
For more information about the crystal selection, refer to the application note Oscillator
design guide for STM8AF/AL/S, STM32 MCUs and MPUs (AN2867).
TCXO regulator
5.
Load capacitance can be managed by internal programmable capacitances at calibration phase. No need to add external
foot capacitances. The values indicated take into account the combination of the two foot capacitances.
Table 57. HSE32 oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tSUA(HSE)
Startup time for 80% amplitude
stabilization
VDDRF stabilized,
SUBGHZ_HSEINTRIMR = 0x12,
-40 to +105 °C temperature range
-1000-
µs
tSUR(HSE)
Startup time
for HSEREADY signal
VDDRF stabilized,
SUBGHZ_HSEINTRIMR = 0x12,
-40 to +105 °C temperature range
-
180
-
IDDRF(HSE) HSE32 current consumption
HSEGMC = 000,
SUBGHZ_HSEINTRIMR = 0x12
-50
-
µA
XOTg(HSE)
SUBGHZ_HSEINTRIMR
granularity
Capacitor bank
-1
5
ppm
XOTfp(HSE)
SUBGHZ_HSEINTRIMR
frequency pulling
±15
±30
-
XOTnb(HSE)
SUBGHZ_HSEINTRIMR
number of tuning bits
-6-
bit
XOTst(HSE)
SUBGHZ_HSEINTRIMR setting
time
--
0.1
ms
Table 58. HSE32 TCXO regulator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VTCXO
Regulated voltage range for
TCXO voltage supply
VDDOP > VTCXO + 200 mV
1.6
1.7
3.3
V
ILTCXO
Load current for TCXO regulator -
-
1.5
4
mA
TSVTCXO Startup time for TCXO regulator
From enable to regulated voltage
within 25 mV from target
-
-
50
µs
IDDTCXO
Current consumption for TCXO
regulator
Quiescent current
-
-
70
µA
Relative to load current
-
1.6
2
%
ATCXO
Amplitude voltage for external
TCXO applied to OSC_IN pin
Provided through a 220 Ω resistor
in series with a capacitance
(voltage divider)(1)
0.4
0.6
1.2(2) Vpk-pk
1. In order to minimize spurious injection, the capacitance value must be calculated such that an amplitude of
0.4 to 0.5 Vpk-pk on OSC_IN is obtained. For TCXO output voltage of 0.8 Vpk-pk, 10 pF can be used.
2. Clipped-sine output TCXO is required, with the output amplitude not exceeding 1.2 V peak-to-peak.



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