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SPC572L60F2 데이터시트(PDF) 23 Page - STMicroelectronics |
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SPC572L60F2 데이터시트(HTML) 23 Page - STMicroelectronics |
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23 / 112 page ![]() DocID027866 Rev 5 23/112 SPC572Lx Electrical characteristics 111 3.8 I/O pad specification The following table describes the different pad type configurations. Table 10. DC electrical specifications(1) Symbol C Parameter Conditions Value Unit Min Typ Max IDD CC P Operating current all supply rails fMAX(2) — — 145 mA IDDPE CC C Operating current all supplies including program/erase fMAX(3) — — 165 mA IDDAPP CC P Operating current all supplies with typical application At TJ<150°C — — 125 mA IDDAR CC P VDD_HV_IO After Run operating current At 40 °C Total device consumption on VDD_HV_IO, including consumption for VDD_LV generation. No I/O activity —— 22 mA CC T After-run mode HV current, TA =55 °C, VDD_HV_IO = 5.5 V —— 24 ISPIKE CC T Maximum short term current spike < 20 µs observation window —— 60 mA dI CC T Current difference ratio to average current (dI/avg(I)) < 20 µs observation window —— 20 % ISR CC D Current variation during boot/shut-down —— — 50 mA VREF_BG_T CC P Bandgap trimmed reference voltage TJ = –40 °C to 150 °C VDD_HV_ADV = 5 V + 10% 1.200 — 1.237 V VREF_BG_TC CC C Bandgap temperature coefficient(4) TJ = –40 °C to 150 °C VDD_HV_ADV = 5 V + 10% -50 — 50 ppm /°C VREF_BG_LR CC C Bandgap line regulation TJ = –40 °C VDD_HV_ADV = 5 V + 10% — — 8000 ppm /V CTJ = 150 °C VDD_HV_ADV = 5 V + 10% — — 4000 1. The ranges in this table are design targets and actual data may vary in the given range. 2. fMAX as specified per IP, unloaded I/O with LVDS pins active and terminated. Measured on an application specific pattern. 3. fMAX as specified per IP, unloaded I/O with LVDS pins active and terminated. Measured on an application specific pattern with active flash program and erase. 4. The temperature coefficient and line regulation specifications are used to calculate the reference voltage drift at an operating point within the specified voltage and temperature operating conditions. |
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