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STM32WB50CG 데이터시트(PDF) 69 Page - STMicroelectronics |
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STM32WB50CG 데이터시트(HTML) 69 Page - STMicroelectronics |
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69 / 119 page ![]() DS13047 Rev 5 69/119 STM32WB50CG STM32WB30CE Electrical characteristics 110 Table 36. Current consumption in Low-power sleep modes, Flash memory in Power down Symbol Parameter Conditions TYP MAX(1) Unit -fHCLK 25 °C 55 °C 85 °C 25 °C 85 °C IDD(LPSleep) Supply current in low-power sleep mode fHCLK = fMSI All peripherals disabled 2 MHz 94.0 115 200 135 610 µA 1 MHz 56.5 86.0 170 94.2 560 400 kHz 40.5 66.5 150 68.0 540 100 kHz 27.5 57.5 140 54.6 539 1. Guaranteed by characterization results, unless otherwise specified. Table 37. Current consumption in Stop 2 mode Symbol Parameter Conditions TYP MAX(1) Unit -VDD 0 °C 25 °C 40 °C 55 °C 85 °C 0 °C 25 °C 85 °C IDD (Stop 2) Supply current in Stop 2 mode, RTC disabled BLE disabled 2.4 V 1.10 1.85 3.20 6.00 22.0 - - - µA 3.0 V 1.10 1.85 3.25 6.10 22.0 1.60 4.17 57.9 3.6 V 1.15 1.95 3.35 6.25 23.0 1.69 4.40 58.6 IDD (Stop 2 with RTC) Supply current in Stop 2 mode, RTC enabled, BLE disabled RTC clocked by LSI 2.4 V 1.45 2.25 3.55 6.40 22.5 - - - 3.0 V 1.50 2.30 3.70 6.55 22.5 2.11 4.64 58.3 3.6 V 1.75 2.50 3.95 6.85 23.5 2.26 5.12 59.7 RTC clocked by LSE quartz(2) in low drive mode 2.4 V 1.45 2.25 3.65 6.40 22.5 - - - 3.0 V 1.55 2.45 3.80 6.65 23.0 2.01 4.31 58.0 3.6 V 1.70 2.55 4.05 6.95 23.5 2.16 4.40 81.6 IDD (wakeup from Stop 2) Supply current during wakeup from Stop 2 mode bypass mode Wakeup clock is MSI = 32 MHz. See(3). 3.0 V - 320 - - - - - - 1. Guaranteed based on test during characterization, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 3. Wakeup with code execution from Flash memory. Average value given for a typical wakeup time as specified in Table 45. |
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