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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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HC705V8GRS/D 데이터시트(PDF) 28 Page - NXP Semiconductors |
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HC705V8GRS/D 데이터시트(HTML) 28 Page - NXP Semiconductors |
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28 / 172 page  SECTION 2: MEMORY MAP Page 17 MC68HC705V8 Specification Rev. 2.1 NOTE: The stack is located in the middle of the RAM address space. Data written to addresses within the stack address range could be overwritten during stack activity. 2.4 BOOTROM The ROM space in the MC68HC705V8 consists of 1008 bytes of EPROM Bootload code, EEPROM test code, burn-in code, and 16 bytes of selfcheck vectors. The MOR register is located in this space. 2.5 EPROM There are 12032 bytes of user EPROM and 16 bytes of EPROM for user vectors and the COP update location. Refer to SECTION 3 EPROM AND EEPROM for programming details. 2.6 EEPROM This device contains 128 bytes of EEPROM. Programming the EEPROM is performed by the user on a single-byte basis by manipulating the Programming Register, located at address $001C. Refer to SECTION 3 EPROM AND EEPROM for programming details. Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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