HC705V8GRSSLASHD datasheet(36/172 Pages) NXP

36 / 172 page

SECTION 3: EPROM AND EEPROM

Page 25

MC68HC705V8 Specification Rev. 2.1

1- The MOR register contents are placed into the memory map at location

$3C00.

The contents of the MOR register can be read/written only if this bit is set and is available

in any operating mode. This bit must be set when the MOR byte is being programmed.

LATCH - EPROM Latch Control

This bit latches the address and data bus when a write to the EPROM array is performed.

NOTE:

The EPROM array cannot be read while this bit is set.

0 - EPROM address and data bus configured for normal reads.

1 - EPROM address and data bus configured for programming.

EPGM - EPROM Program Control

READ: Any time

WRITE: Cleared any time, Set only if LATCH=1

This bit controls the programming voltage to the EPROM array. EPGM can not be set if

LATCH is not already set. EPGM is automatically cleared when LATCH = 0.

NOTE:

LATCH and EPGM cannot both be set on the same write.

0 - Programming power switched off to the EPROM array.

1 - Programming power switched on to the EPROM array.

The sequence for programming the EPROM is as follows:

1. Set the LATCH bit. If programming the MOR byte, also set the MORON bit.

2. Write the data to be programmed to the EPROM (or MOR byte) location to be

programmed.

3. Set the EPGM bit.

4. Wait a time tEPGM

5. Clear the LATCH, MORON (if programming the MOR byte) and EPGM bits.

6. Repeat for each byte.

3.3

MASK OPTION REGISTER (MOR) $3C00

The Mask Option Register (MOR) is used to select all mask options available on the

MC68HC705V8.

When in the erased state, the EPROM cells will read as a logic zero

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com

HC705V8GRS/D 데이터시트(PDF) 36 Page - NXP Semiconductors