STM32H7B0AB datasheet(93/205 Pages) STMICROELECTRONICS

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Symbol

Parameter

Operating conditions(1)

Min(2)

Typ(2)

Max(2)

Unit

Gmcritmax

Maximum critical crystal gm

Medium high drive capability

µA/V

LSEDRV[1:0] = 11,

High drive capability

2.7

tSU(3)

Startup time

VDD is stabilized

1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST

microcontrollers.

2. Guaranteed by design.

3. tSU is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768k Hz oscillation is reached. This value is

measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST

microcontrollers” available from the ST website www.st.com.

Figure 24. Typical application with a 32.768 kHz crystal

STM32

OSC32_OUT

fHSE

CL1

32.768 kHz

resonator

Bias

controlled

gain

OSC32_IN

CL2

Resonator with

integrated capacitors

An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.

6.3.10

Internal clock source characteristics

The parameters given in Table 49. HSI48 oscillator characteristics to Table 52. LSI oscillator characteristics

are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in

Table 20. General operating conditions.

48 MHz high-speed internal RC oscillator (HSI48)

Table 49. HSI48 oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI48

HSI48 frequency

VDD = 3.3 V, TJ = 30 °C 47.5(1)

48.5(1) MHz

TRIM(2)

User trimming step

0.175 0.250

USER TRIM COVERAGE(3)

User trimming coverage

± 32 steps

±4,70

±5.6

DuCy(HSI48)(2)

Duty cycle

ACCHSI48_REL(3)

Accuracy of the HSI48 oscillator over temperature

(reference is 30 °C)

TJ = −40 to 130 °C

−4.5

ΔVDD(HSI48)(2)

HSI48 oscillator frequency drift with VDD (reference is

3.3 V)

VDD = 3 to 3.6 V

0.025

0.05

VDD = 1.62 to 3.6 V

0.05

0.1

tsu(HSI48)(2)

HSI48 oscillator startup time

2.1

4.0

µs

IDD(HSI48)(2)

HSI48 oscillator power consumption

350

400

µA

NT jitter(2)

Next transition jitter accumulated jitter on 28 cycles

± 0.15

STM32H7B0xB

Operating conditions

DS13196 - Rev 7

page 93/205

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