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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32H7B0AB 데이터시트(PDF) 97 Page - STMicroelectronics |
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STM32H7B0AB 데이터시트(HTML) 97 Page - STMicroelectronics |
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97 / 205 page  6.3.12 Memory characteristics Flash memory The characteristics are given at TJ = –40 to 130 °C unless otherwise specified. The devices are shipped to customers with the flash memory erased. Table 55. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Word program - 2.5 4 mA Sector erase - 1.8 3 Mass erase - 2.0 3 Table 56. Flash memory programming Symbol Parameter Conditions Min Typ Max(1) Unit tprog Word program time 128 bits (user area) - - 20 µs 16 bits (OTP area) - - 20 tERASE8KB Sector erase time (8 Kbytes) - - - 2.2 ms tME Bank mass erase time - - 10 Vprog Programming voltage 1.62 - 3.6 V 1. Guaranteed by characterization results. Table 57. Flash memory endurance and data retention Symbol Parameter Conditions Value Unit Min(1) NEND Endurance TJ = –40 to +130 °C 10 kcycles tRET Data retention 1 kcycle at TA = 85 °C 30 Years - 10 kcycles at TA = 55 °C 20 1. Guaranteed by characterization results. STM32H7B0xB Operating conditions DS13196 - Rev 7 page 97/205 |
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