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S75WS256NDFBAWMB 데이터시트(PDF) 164 Page - SPANSION

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상세설명  Stacked Multi-Chip Product (MCP)
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S75WS256Nxx Based MCPs
S75WS-N-00_A0 February 17, 2005
Ad van c e
Inf o rmation
strength option minimizes the noise generated on the data bus during Read operations. Normal
output drive strength should be selected when using a discrete CellularRAM device in a more
heavily loaded data bus environment. Outputs are configured at full drive strength during testing.
31.2.4
Wait Configuration (BCR[8]): Default = Wait Transitions One
Clock Before Data Valid/Invalid
The Wait configuration bit is used to determine when Wait transitions between the asserted and
the de-asserted state with respect to valid data presented on the data bus. The memory controller
will use the Wait signal to coordinate data transfer during synchronous Read and Write operations.
When BCR[8] = 0, data will be valid or invalid on the clock edge immediately after Wait transitions
to the de-asserted or asserted state, respectively (Figure 31.3 and Figure 31.5). When A8 = 1,
the Wait signal transitions one clock period prior to the data bus going valid or invalid
(Figure 31.4).
31.2.5
Wait Polarity (BCR[10]): Default = Wait Active High
The Wait polarity bit indicates whether an asserted Wait output should be High or Low. This bit
will determine whether the Wait signal requires a pull-up or pull-down resistor to maintain the de-
asserted state.
Table 31.3 Output Impedance
BCR[5]
BCR[4]
DRIVE STRENGTH
00
Full
01
1/2
10
1/4
11
Reserved
Note: Data valid/invalid immediately after Wait transitions (BCR[8] = 0). See Figure 31.5.
Figure 31.3 Wait Configuration (BCR[8] = 0)
Note: Valid/invalid data delayed for one clock after Wait transitions (BCR[8] = 1). See Figure 31.5.
Figure 31.4 Wait Configuration (BCR[8] = 1)
Data[0]
Data[1]
High-Z
CLK
WAIT
DQ[15:0]
Data immediately valid (or invalid)
Data[0]
High-Z
CLK
WAIT
DQ[15:0]
Data valid (or invalid) after one clock delay



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