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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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S75WS256NDFBAWMB 데이터시트(PDF) 167 Page - SPANSION |
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S75WS256NDFBAWMB 데이터시트(HTML) 167 Page - SPANSION |
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167 / 216 page  February 17, 2005 S75WS-N-00_A0 S75WS256Nxx Based MCPs 165 Advance Information 31.3.2 Deep Power-Down (RCR[4]): Default = DPD Disabled The deep power-down bit enables and disables all refresh-related activity. This mode is used if the system does not require the storage provided by the CellularRAM device. Any stored data will become corrupted when DPD is enabled. When refresh activity has been re-enabled, the Cellular- RAM device will require 150µs to perform an initialization procedure before normal operations can resume. Deep power-down is enabled when RCR[4] = 0, and remains enabled until RCR[4] is set to 1. 31.3.3 Temperature Compensated Refresh (RCR[6:5]): Default = +85ºC Operation The TCR bits allow for adequate refresh at four different temperature thresholds (+15ºC, +45ºC, +70ºC, and +85ºC). The setting selected must be for a temperature higher than the case tem- perature of the CellurlarRAM device. If the case temperature is +50ºC, the system can minimize self refresh current consumption by selecting the +70ºC setting. The +15ºC and +45ºC settings would result in inadequate refreshing and cause data corruption. 1 1 0 One-quarter of die 600000h–7FFFFFh 2 Meg x 16 32Mb 1 1 1 One-eighth of die 700000h–7FFFFFh 1 Meg x 16 16Mb Table 31.7 64Mb Address Patterns for PAR (RCR[4] = 1) RCR[2] RCR[1] RCR[0] Active Section Address Space Size Density 0 0 0 Full die 000000h–3FFFFFh 4 Meg x 16 64Mb 0 0 1 One-half of die 000000h–2FFFFFh 3 Meg x 16 48Mb 0 1 0 One-quarter of die 000000h–1FFFFFh 2 Meg x 16 32Mb 0 1 1 One-eighth of die 000000h–0FFFFFh 1 Meg x 16 16Mb 1 0 0 None of die 0 0 Meg x 16 0Mb 1 0 1 One-half of die 100000h–3FFFFFh 3 Meg x 16 48Mb 1 1 0 One-quarter of die 200000h–3FFFFFh 2 Meg x 16 32Mb 1 1 1 One-eighth of die 300000h–3FFFFFh 1 Meg x 16 16Mb Table 31.8 32Mb Address Patterns for PAR (RCR[4] = 1) RCR[2] RCR[1] RCR[0] ACTIVE SECTION ADDRESS SPACE SIZE DENSITY 0 0 0 Full die 000000h–1FFFFFh 2 Meg x 16 32Mb 0 0 1 One-half of die 000000h–17FFFFh 1.5 Meg x 16 24Mb 0 1 0 One-quarter of die 000000h–0FFFFFh 1 Meg x 16 16Mb 0 1 1 One-eighth of die 000000h–07FFFFh 512K x 16 8Mb 1 0 0 None of die 0 0 Meg x 16 0Mb 1 0 1 One-half of die 080000h–1FFFFFh 1.5 Meg x 16 24Mb 1 1 0 One-quarter of die 100000h–1FFFFFh 1 Meg x 16 16Mb 1 1 1 One-eighth of die 180000h–1FFFFFh 512K x 16 8Mb Table 31.6 128Mb Address Patterns for PAR (RCR[4] = 1) (Continued) RCR[2] RCR[1] RCR[0] Active Section Address Space Size Density |
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