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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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S75WS256NDFBAWMB 데이터시트(PDF) 208 Page - SPANSION |
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S75WS256NDFBAWMB 데이터시트(HTML) 208 Page - SPANSION |
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208 / 216 page  206 S75WS256Nxx Based MCPs S75WS-N-00_A0 February 17, 2005 Ad van c e Inf o rmation Notes: 1. Non-default BCR settings: Latency code two (three clocks); Wait active Low; Wait asserted during delay. 2. When transitioning between asynchronous and variable-latency burst operations, CE# must go High. If CE# goes High, it must remain High for at least 5ns (tCBPH) to schedule the appropriate internal refresh operation. See How Extended Timings Impact CellularRAM™ Operation for restrictions on the maximum CE# Low time (tCEM). Figure 34.26. Burst Read Followed by Asynchronous Write Using ADV# Valid Address tSP tHD tOHZ High-Z High-Z VIH VIL VIH VIL VIH VIL VIH VIL VOH VOL VOH VOL A[22:0] ADV# CE# DQ[15:0] WAIT tHD VIH VIL OE# WE# tCLK VIH VIL CLK tSP tHD (Note 2) tWP tWPH tSP tHD Valid Output Valid Input tCBPH tKOH tACLK Don't Care Undefined Legend: Valid Address tAS VIH VIL LB#/UB# tOLZ tAVS tAVH tCSP tBW tDH tKHTL tDW tSP tHD tHZ tBOE tCEM tAW tCW tVS tVP tVPH tAS tCEW tCEW tHZ READ Burst Identified (WE# = HIGH) High-Z |
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