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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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S75WS256NDFBAWMB 데이터시트(PDF) 210 Page - SPANSION |
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S75WS256NDFBAWMB 데이터시트(HTML) 210 Page - SPANSION |
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210 / 216 page  208 S75WS256Nxx Based MCPs S75WS-N-00_A0 February 17, 2005 Ad van c e Inf o rmation Note: CE# can stay Low when transitioning between asynchronous operations. If CE# goes High, it must remain High for at least 5ns (tCBPH) to schedule the appropriate internal refresh operation. See How Extended Timings Impact Cel- lularRAM™ Operation for restrictions on the maximum CE# Low time (tCEM). Figure 34.29. Asynchronous Write Followed by Asynchronous Read—ADV# Low tOHZ High-Z High-Z VIH VIL VIH VIL VIH VIL VIH VIL VIH VIL VIH VIL VOH VOL A[22:0] ADV# CE# LB#/UB# DQ[15:0] WAIT tCEM VIH VIL OE# WE# tBLZ tOE Valid Address (Note) tWP tWPH Valid Output VOH VOL tOLZ Don't Care Undefined Legend: Valid Address Valid Address tBW tCW tAW tWR tCBPH tWC DATA tWHZ DATA tAS tDH tDW tHZ tHZ tBHZ tAA tHZ tLZ |
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