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SST26VF032B-104I/SM 데이터시트(PDF) 44 Page - Microchip Technology |
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SST26VF032B-104I/SM 데이터시트(HTML) 44 Page - Microchip Technology |
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44 / 82 page ![]() SST26VF032B/SST26VF032BA DS20005218K-page 44 2013-2022 Microchip Technology Inc. and its subsidiaries 7.0 DC CHARACTERISTICS TABLE 7-1: DC OPERATING CHARACTERISTICS (VDD = 2.3V - 3.6V) Symbol Parameter Limits Test Conditions Min. Typ. Max. Units IDDR1 Read Current — 8 15 mA VDD =VDD Max, CE# = 0.1 VDD/0.9 VDD@40 MHz, SO = open IDDR2 Read Current — — 20 mA VDD = VDD Max, CE# = 0.1 VDD/0.9 VDD@104 MHz, SO = open IDDW1 Program and Erase Current — — 25 mA CE# = VDD Max IDDW2 Program and Erase Current — — 30 mA CE# = VDD Max @ 125°C ISB1 Standby Current — 15 45 µA CE# = VDD, VIN =VDD or VSS ISB2 Standby Current — — 80 µA CE# = VDD, VIN =VDD or VSS @125°C ILI Input Leakage Current — — 2 µA VIN = GND to VDD, VDD =VDD Max ILO Output Leakage Current — — 2 µA VOUT = GND to VDD, VDD =VDD Max VIL Input Low Voltage — — 0.8 V VDD=VDD Min VIH Input High Voltage 0.7*VDD —— V VDD=VDD Max VOL Output Low Voltage — — 0.2 V IOL = 100 µA, VDD =VDD Min VOH Output High Voltage VDD-0.2 — — V IOH = -100 µA, VDD =VDD Min TABLE 7-2: CAPACITANCE (TA = 25°C, F=1 MHZ, OTHER PINS OPEN) Parameter Description Test Condition Maximum COUT(1) Output Pin Capacitance VOUT = 0V 8 pF CIN(1) Input Capacitance VIN = 0V 6 pF Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 7-3: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND(1) Endurance 100,000 Cycles JEDEC Standard A117 and AEC-Q100-005 TDR(1) Data Retention 100 Years JEDEC Standard A103 and AEC-Q100-005 ILTH(1) Latch Up 100 + IDD mA JEDEC Standard 78 and AEC-Q100-004 Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. |
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