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SST26VF032B-104I/SM 데이터시트(PDF) 45 Page - Microchip Technology |
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SST26VF032B-104I/SM 데이터시트(HTML) 45 Page - Microchip Technology |
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45 / 82 page ![]() 2013-2022 Microchip Technology Inc. and its subsidiaries DS20005218K-page 45 SST26VF032B/SST26VF032BA TABLE 7-4: WRITE TIMING PARAMETERS (VDD = 2.3V-3.6V) Symbol Parameter Minimum Maximum Units TSE Sector Erase — 25 ms TBE Block Erase — 25 ms TSCE Chip Erase — 50 ms TPP(1) Page Program — 1.5 ms TPSID Program Security-ID — 1.5 ms TWS Write Suspend Latency — 25 µs TWPEN Write Protection Enable Bit Latency — 25 ms Note 1: Estimate for typical conditions less than 256 bytes: Programming Time (µs) = 55 + (3.75 x # of bytes) |
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