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SMC032BFY6 데이터시트(PDF) 25 Page - STMicroelectronics

부품명 SMC032BFY6
상세설명  32MByte, 64MByte, 128MByte, 256MByte, 512MByte, 1GByte, 2GByte, and 4GByte 3.3/5V Supply CompactFlash??Card
PDF  91 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SMC032BFY6 데이터시트(HTML) 25 Page - STMicroelectronics

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SMCxxxBF
Command Interface
25/91
Figure 3.
Configuration Register (Attribute Memory) Write waveforms
1.
DIN signifies data provided by the system to the CompactFlash Card.
ta(OE)
tGLQV
OE Access Time
150
ns
tdis(CE)
tEHQZ
Output Disable Time from CE
100
ns
tdis(OE)
tGHQZ
Output Disable Time from OE
100
ns
ten(CE)
tELQNZ
Output Enable Time from CE
5
ns
ten(OE)
tGLQNZ
Output Enable Time from OE
5
ns
tv(A)
tAXQX
Data Valid from Address Change
0
ns
tsu(A)
tAVGL
Address Setup Time
30
ns
Table 16.
Attribute Memory Read timing (continued)
Speed Version
300ns
Symbol
IEEE Symbol
Parameter
Min
Max
Unit
AI10081
Address Inputs
–REG
–CE2/–CE1
–OE
–WE
D0 to D15 (DIN)
tc(W)
DATA IN VALID
VALID
tsu(A)
trec(WE)
tw(WE)
tsu(D-WEH)
th(D)
Table 17.
Configuration Register (Attribute Memory) Write timing
Speed Version
250ns
Symbol
IEEE Symbol
Parameter
Min
Max
Unit
tc(W)
tAVAV
Write Cycle Time
250
ns
tw(WE)
tWLWH
Write Pulse Width
150
ns
tsu(A)
tAVWL
Address Setup Time
30
ns
tsu(D-WEH)
tDVWH
Data Setup Time from WE
80
ns
th(D)
tWMDX
Data Hold Time
30
ns
trec(WE)
tWMAX
Write Recovery Time
30
ns



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