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ST10F271Z1T3 데이터시트(PDF) 31 Page - STMicroelectronics

부품명 ST10F271Z1T3
상세설명  16-bit MCU with 128 Kbyte Flash memory and 12 Kbyte RAM
PDF  185 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ST10F271Z1
Internal Flash memory
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5.4.4
Flash control register 1 high
The Flash Control Register 1 High (FCR1H), together with Flash Control Register 1 Low
(FCR1L), is used to select the Sectors to Erase, or during any write operation to monitor the
status of each Sector and Bank.
During any erase operation, this bit is automatically set and gives the status of the Bank 0.
The meaning of B0Fy bit for Sector y of Bank 0 is given by the next Table 4 Banks (BxS) and
Sectors (BxFy) Status bits meaning. These bits are automatically reset at the end of an
erase operation if no errors are detected.
5.4.5
Flash data register 0 low
The Flash Address Registers (FARH/L) and the Flash Data Registers (FDR1H/L-FDR0H/L)
are used during the program operations to store Flash Address in which to program and
Data to program.
FCR1H (0x08 0006)
FCR
Reset value:
0000h
15
14
13
12
11
10
987
65432
10
reserved
B0S
reserved
RS
Table 10.
Flash control register 1 high
Bit
Function
B0S
Bank 0 Status (IFlash)
During any erase operation, this bit is automatically modified and gives the status
of the Bank 0. The meaning of B0S bit is given in the next Table 4 Banks (BxS) and
Sectors (BxFy) Status bits meaning. This bit is automatically reset at the end of a
erase operation if no errors are detected.
Table 11.
Banks (BxS) and sectors (BxFy) status bits meaning
ERR
SUSP
B0S = 1 meaning
B0Fy = 1 meaning
1
-
Erase error in Bank 0
Erase error in sector y of Bank 0
0
1
Erase suspended in Bank 0
Erase suspended in sector y of Bank 0
0
0
Don’t care
Don’t care
FDR0L (0x08 0008)
FCR
Reset value:
FFFFh
15
14
13
12
11
10
98765
43210
DIN15 DIN14 DIN13 DIN12 DIN11 DIN10 DIN9 DIN8 DIN7 DIN6 DIN5 DIN4 DIN3 DIN2 DIN1 DIN0
RW
RW
RW
RW
RW
RW
RW
RW
RW
RW
RW
RW
RW
RW
RW
RW



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