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ST10F271Z1T3 데이터시트(PDF) 33 Page - STMicroelectronics |
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ST10F271Z1T3 데이터시트(HTML) 33 Page - STMicroelectronics |
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33 / 185 page ![]() ST10F271Z1 Internal Flash memory 33/185 5.4.9 Flash address register low 5.4.10 Flash address register high Table 15. Flash data register 1 high Bit Function DIN(31:16) Data input 31:16 These bits must be written with the data to program the Flash with the following operations: word program (32-bit), double word program (64-bit) and set protection. FARL (0x08 0010) FCR Reset value: 0000h 15 14 13 12 11 10 987 65432 10 ADD15ADD14ADD13ADD12ADD11ADD10 ADD9 ADD8 ADD7 ADD6 ADD5 ADD4 ADD3 ADD2 reserved RW RW RW RW RW RW RW RW RW RW RW RW RW RW Table 16. Flash address register low Bit Function ADD(15:2) Address 15:2 These bits must be written with the address of the Flash location to program in the following operations: word program (32-bit) and double word program (64-bit). in double word program bit ADD2 must be written to ‘0’. FARH (0x08 0012) FCR Reset value: 0000h 15 14 13 12 11 10 987 65432 10 reserved ADD20 ADD19 ADD18 ADD17 ADD16 RW RW RW RW RW Table 17. Flash address register high Bit Function ADD(20:16) Address 20:16 These bits must be written with the address of the Flash location to program in the following operations: word program and double word program. |
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