STA680 datasheet(40/48 Pages) STMICROELECTRONICS

40 / 48 page

Electrical specifications

STA680

40/48

DS5877 Rev 13

Ilpd

Low level input

leakage current on

pull-down(8)

Vi = 0 V-

μA

Rpu

Equivalent pull-up

resistance(9)

3.3 V supply mode Vi = 0.1 V

180

kΩ

Rpd

Equivalent pull-

down resistance(10)

3.3 V supply mode Vi = 3.5 V

180

kΩ

Vil

Low level input

voltage

3.3 V supply mode

-0.3

0.7

Vih

High level input

voltage

3.3 V supply mode

2.0

VDD_

GEN_IO

+0.3

Vhyst

Input hysteresis

voltage

3.3 V supply mode

Voh

Output high voltage

Ioh =XmA(11)

VDD_G

EN_IO

– 0.4V

Vol

Output low voltage

Iol =XmA(11)

0.3

Ilatchup

Injection current

Maximum operating junction temperature

100

Iil_ram

Low level input

leakage current(5)

Vi = 0V

μA

Iih_ram

High level input

leakage current(5)

Vi = VDD_RAM_IO

μA

Ilpu_ram

High level input

leakage current on

pull up(7)

Vi = VDD_RAM_IO

μA

Ipu_ram

Pull-up current

Vi = 0.1V

150

μA

Rpu_ram

Equivalent pull-up

resistance(9)

Vi = 0.1V

kΩ

Vil_ram

Low level input

voltage

0.8

Vih_ram

High level input

voltage

Vhyst_ram

Schmitt trigger

hysteresis

300

800

Voh_ram

High level output

voltage

Ioh = -XmA(11)

VDD_R

AM_IO

-0.4

Vol_ram

Low level output

voltage

Iol =XmA(11)

0.3

Idc

3V3 to 1V8 DC

regulator output

current

100

Table 20. DC electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

STA680 데이터시트(PDF) 40 Page - STMicroelectronics

STA680 데이터시트(HTML) 40 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48

데이터시트 다운로드

링크 URL