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STM32H533CE 데이터시트(PDF) 111 Page - STMicroelectronics |
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STM32H533CE 데이터시트(HTML) 111 Page - STMicroelectronics |
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111 / 231 page ![]() DS14539 Rev 1 111/231 STM32H533xx Electrical characteristics 200 Table 32. Typical consumption in Run mode with SecureMark running from flash memory and SRAM(1) 1. Evaluated by characterization - Not tested in production. Symbol Parameter Conditions fHCLK (MHz) Typ LDO Unit Typ LDO Unit Peripheral Code IDD(Run) Supply current in Run mode All peripherals disabled, instruction cache 2-way, prefetch ON FLASH 250 32.8 mA 131.2 μA/MHz 180 20.9 116.2 168 19.4 115.6 150 16.1 107.2 100 10.3 102.5 All peripherals disabled, instruction cache 1-way, prefetch ON FLASH 250 30.0 120.0 180 19.1 106.4 168 17.9 106.3 150 14.7 98.3 100 9.5 94.6 Table 33. Typical and maximum current consumption in Sleep mode Symbol Parameter Conditions fHCLK (MHz) Typ LDO Max(1) 1. Evaluated by characterization - Not tested in production. Unit TJ = 25°C TJ = 85°C TJ = 105°C TJ = 130° IDD(sleep) Supply current in sleep mode All peripherals disabled VOS0 250 6.3 7 18 27 - mA 200 4.9 6 15 25 - VOS1 200 4.2 5 12 20 35 180 4.1 5 12 20 35 168 3.6 4 12 19 35 150 3.3 4 11 18 34 VOS2 150 3.0 4 10 16 29 100 2.4 3 9 15 28 VOS3 100 2.2 3 8 13 24 60 1.7 2 7 12 23 |
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