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STM32H533CE 데이터시트(PDF) 112 Page - STMicroelectronics |
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STM32H533CE 데이터시트(HTML) 112 Page - STMicroelectronics |
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112 / 231 page ![]() Electrical characteristics STM32H533xx 112/231 DS14539 Rev 1 v Table 34. Typical and maximum current consumption in Stop mode Parameter Conditions Typ LDO Max(1) Unit TJ = 25°C TJ = 85°C TJ = 105°C TJ = 130°C IDD (stop) Supply current in Stop Flash memory in low power mode, SRAMs ON SVOS3 0.26 0.79 6.34 11.45 22.31 mA SVOS4 0.19 0.59 5.05 9.21 18.13 SVOS5 0.15 0.43 3.97 7.42 14.99 Flash memory in normal mode, SRAMs ON SVOS3 0.27 0.81 6.36 11.47 22.35 SVOS4 0.21 0.61 5.07 9.24 18.17 Flash memory in low power mode, SRAMs OFF except SRAM2 16 Kbytes ON SVOS3 0.20 0.65 5.08 9.21 18.05 SVOS4 0.15 0.48 4.05 7.41 14.68 SVOS5 0.10 0.32 2.84 5.32 10.81 Flash memory in low power mode, SRAMs OFF except SRAM2 ON SVOS3 0.21 0.70 5.49 9.93 19.42 SVOS4 0.16 0.52 4.37 7.99 15.79 SVOS5 0.16 0.36 3.20 5.98 12.12 1. Evaluated by characterization - Not tested in production. Table 35. Typical and maximum current consumption in Standby mode Symbol Parameter Conditions Typ(1) Max(1) Unit Backup RAM RTC and LSE(2) 1.8 V 2.4 V 3 V 3.3 V TJ = 25 °C TJ = 85 °C TJ = 105 °C TJ = 130 °C IDD(standby) Supply current in standby mode, IWDG OFF OFF OFF 2.6 2.8 3.0 3.2 4.3 8.8 16.5 42.6 μA ON OFF 3.8 4.1 4.4 4.6 6.4 16.9 31.5 75.7 OFF ON 2.9 3.2 3.5 3.7 5.3 10.0 17.8 44.6 ON ON 4.2 4.5 4.9 5.1 7.4 18.1 32.8 77.7 1. Evaluated by characterization - Not tested in production. 2. LSE is in medium-low drive mode. Table 36. Typical and maximum current consumption in VBAT mode Symbol Parameter Conditions Typ(1) Max(1) Unit Backup RAM RTC and LSE(2) 1.62 V 2.4 V 3 V 3.3 V TJ = 25 °C TJ = 85 °C TJ = 105 °C TJ = 130 °C IDD(VBAT) Supply current in VBAT mode OFF OFF 0.01 0.01 0.02 0.02 0.2 2.0 4.9 14.9 μA ON OFF 1.1 1.1 1.2 1.30 2.7 12.7 23.8 52.2 OFF ON 0.5 0.5 0.5 0.6 1.2 3.2 6.2 16.9 ON ON 1.6 1.6 1.6 1.8 3.7 13.9 25.1 54.2 |
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