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STM32H533CE 데이터시트(PDF) 159 Page - STMicroelectronics |
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STM32H533CE 데이터시트(HTML) 159 Page - STMicroelectronics |
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159 / 231 page ![]() DS14539 Rev 1 159/231 STM32H533xx Electrical characteristics 200 NAND controller waveforms and timings Figures 29 through 32 represent synchronous waveforms, tables 81 and 82 provide the corresponding timings. The results are obtained with the following FMC configuration and a capacitive load (CL) of 30 pF: • COM.FMC_SetupTime = 0x01 • COM.FMC_WaitSetupTime = 0x03 • COM.FMC_HoldSetupTime = 0x02 • COM.FMC_HiZSetupTime = 0x01 • ATT.FMC_SetupTime = 0x01 • ATT.FMC_WaitSetupTime = 0x03 • ATT.FMC_HoldSetupTime = 0x02 • ATT.FMC_HiZSetupTime = 0x01 • Bank = FMC_Bank_NAND • MemoryDataWidth = FMC_MemoryDataWidth_16b • ECC = FMC_ECC_Enable • ECCPageSize = FMC_ECCPageSize_512Bytes • TCLRSetupTime = 0 • TARSetupTime = 0 • Capacitive load CL = 30 pF In all timing tables, Tfmc_ker_ck is the HCLK clock period. Figure 29. NAND controller waveforms for read access 1. y = 7 or 15, depending upon the NAND flash memory interface. 1. Evaluated by characterization - Not tested in production. MSv73150V1 FMC_NWE FMC_NOE (NRE) FMC_D[y:0] tw(NOE) tsu(D-NOE) th(NOE-D) ALE (FMC_A17) CLE (FMC_A16) FMC_NCEx td(ALE-NOE) th(NOE-ALE) |
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