M58LR128KB855 datasheet(54/110 Pages) NUMONYX

부품명	M58LR128KB855

상세설명	128 or 256 Mbit (횞16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories

PDF	110 Pages

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Program and erase times and endurance cycles

M58LR128KT, M58LR128KB, M58LR256KT,

54/111

Program and erase times and endurance cycles

The program and erase times and the number of program/ erase cycles per block are shown

in Table 18. Exact erase times may change depending on the memory array condition. The

best case is when all the bits in the block are at ‘0’ (pre-programmed). The worst case is

when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the system overhead is

negligible with respect to the erase time. In the M58LRxxxKT/B the maximum number of

program/erase cycles depends on the VPP voltage supply used.

Table 18.

Program/erase times and endurance cycles(1) (2)

Parameter

Condition

Min

Typ

Typical after

100kW/E

cycles

Max

Unit

Erase

Parameter block (16 Kword)

0.4

2.5

Main block (64

Kword)

Preprogrammed

1.2

Not preprogrammed

1.5

Program(3)

Single Word

Word program

180

µs

Buffer program

180

µs

Buffer (32 words) (buffer program)

384

µs

Main block (64 Kword)

768

Suspend latency

Program

µs

Erase

µs

Program/erase cycles

(per block)

Main blocks

100 000

cycles

Parameter blocks

100 000

cycles

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