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M58LR128KB855 데이터시트(PDF) 24 Page - Numonyx B.V

부품명 M58LR128KB855
상세설명  128 or 256 Mbit (횞16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
PDF  110 Pages
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제조업체  NUMONYX [Numonyx B.V]
홈페이지  http://www.numonyx.com
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M58LR128KB855 데이터시트(HTML) 24 Page - Numonyx B.V

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Command interface
M58LR128KT, M58LR128KB, M58LR256KT, M58LR256KB
24/111
3.
Use n+1 bus write cycles to load the address and data for each word into the write
buffer. Addresses must lie within the range from the start address to the start
address + n, where the start address is the location of the first data to be programmed.
Optimum performance is obtained when the start address corresponds to a 32 word
boundary.
4.
The final bus write cycle confirms the Buffer Program command and starts the program
operation.
All the addresses used in the Buffer Program operation must lie within the same block.
Invalid address combinations or failing to follow the correct sequence of bus write cycles
sets an error in the Status Register and aborts the operation without affecting the data in the
memory array.
If the Status Register bits SR4 and SR5 are set to '1', the Buffer Program command is not
accepted. Clear the Status Register before re-issuing the command.
If the block being programmed is protected an error sets in the Status Register and the
operation aborts without affecting the data in the memory array.
During Buffer Program operations the bank being programmed only accepts the Read Array,
Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase
Suspend commands; all other commands are ignored.
Refer to Section 8: Dual operations and multiple bank architecture for detailed information
about simultaneous operations allowed in banks not being programmed.
See Appendix C, Figure 20: Buffer program flowchart and pseudocode for a suggested
flowchart on using the Buffer Program command.
4.10
Buffer Enhanced Factory Program command
The Buffer Enhanced Factory Program command has been specially developed to speed up
programming in manufacturing environments where the programming time is critical.
It is used to program one or more write buffer(s) of 32 words to a block. Once the device
enters Buffer Enhanced Factory Program mode, the write buffer can be reloaded any
number of times as long as the address remains within the same block. Only one block can
be programmed at a time.
If the block being programmed is protected, then the Program operation aborts the data in
the block does not change, and the Status Register outputs the error.
The use of the Buffer Enhanced Factory Program command requires the following operating
conditions:
●
VPP must be set to VPPH
●
VDD must be within operating range
●
Ambient temperature TA must be 30°C ± 10°C
●
The targeted block must be unlocked
●
The start address must be aligned with the start of a 32 word buffer boundary
●
The address must remain the start address throughout programming.
Dual operations are not supported during the Buffer Enhanced Factory Program operation
and the command cannot be suspended.



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