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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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H8SX1663 데이터시트(PDF) 301 Page - Renesas Technology Corp |
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H8SX1663 데이터시트(HTML) 301 Page - Renesas Technology Corp |
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301 / 1158 page  Section 6 Bus Controller (BSC) Rev.1.00 Jun. 07, 2006 Page 249 of 1102 REJ09B0294-0100 (2) Self-Refresh Mode Some DRAMs have a self-refresh mode (battery backup mode). The self-refresh mode is a kind of standby mode and refresh timing and refresh address are controlled internally. The self-refresh mode is selected by setting the RFSHE and SLFRF bits in REFCR to 1. The CAS and RAS signals are output as shown in figure 6.56 by executing the SLEEP instruction. Then, DRAM enters self-refresh mode. When a CBR refresh is requested on a transition to the standby mode, the CBR refresh is first performed and then the self-refresh mode is entered. When the self-refresh mode is used, do not clear the OPE bit in SBYCR to 0. For details, see section 23.2.1, Standby Control Register (SBYCR). TRp TRr TRc3 B φ RAS LUCAS LLCAS WE BS RD/ WR High Software standby TRc4 High High Figure 6.56 Self-Refresh Timing |
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