UPD30121 datasheet(41/76 Pages) NEC

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Data Sheet U14691EJ1V0DS00

µµµµPD30121

(6)

EDO-type DRAM write parameter (1/2)

The target DRAM is the

µPD42S16165L-A60, 42S18165L-A60, 42S64165G5-A50, 42S64165G5-A60,

42S65165G5-A50, or 42S65165G5-A60.

Parameter

Symbol

Condition

MIN.

MAX.

Unit

MRAS (0:3)# pulse width

tRASP

MRAS (0:3)# hold time (from UCAS#/LCAS# precharge)

tRHCP

MRAS (0:3)# precharge time

tRP

UCAS#/LCAS# hold time (from MRAS (0:3)#

↓)tCSH

UCAS#/LCAS# pulse width

tHCAS

UCAS#/LCAS# precharge time

tCP

Read/write cycle time

tHPC

MRAS (0:3)# hold time (from UCAS#/LCAS#)

tRSH

Row address setup time (to MRAS (0:3)#

↓)tASR

0ns

UCAS#/LCAS#

↓ delay time from MRAS (0:3)# ↓

tRCD

Column address delay time from MRAS (0:3)#

↓

tRAD

Column address setup time (to UCAS#/LCAS#

↓)tASC

0ns

Column address read time (to MRAS (0:3)#

↑)tRAL

Row address hold time (from MRAS (0:3)#

↓)tRAH

Column address hold time 1 (from UCAS#/LCAS#

↓)tCAH1

Column address hold time 2 (from UCAS#/LCAS#

↓)tCAH2

Column address hold time 3 (from UCAS#/LCAS#

↓)tCAH3

WR# setup time

tWCS

0ns

WR# hold time (from UCAS#/LCAS#

↓)tWCH

Data output setup time

tD1

0ns

Data output hold time

tD2

Caution These ratings are applied only when a device operates within the recommended operating

condition range and the operating ambient temperature is kept constant.

If the power supply voltage or operating ambient temperature changes during DRAM access, the

above ratings are not applied.

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