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PD46185092B 데이터시트(PDF) 14 Page - Renesas Technology Corp

부품명 PD46185092B
상세설명  18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
PDF  36 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

PD46185092B 데이터시트(HTML) 14 Page - Renesas Technology Corp

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μPD46185092B, μPD46185182B, μPD46185362B
R10DS0112EJ0200 Rev.2.00
Page 14 of 35
Nov 09, 2012
DC Characteristics 1 (TA = 0 to 70
°C, VDD = 1.8 ± 0.1 V)
Parameter
Symbol
Test condition
MIN.
MAX.
Unit Note
x9
x18
x36
Input leakage current
ILI
−2
+2
μA
I/O leakage current
ILO
−2
+2
μA
Operating supply current
IDD
VIN
≤ VIL or VIN ≥ VIH,
-E33
570
690
770 mA
(Read cycle / Write cycle)
II/O = 0 mA,
Cycle = MAX.
-E40
510
610
690
Standby supply current
ISB1
VIN
≤ VIL or VIN ≥ VIH,
-E33
310
320
340 mA
(NOP)
II/O = 0 mA,
Cycle = MAX.
-E40
300
310
330
Inputs static
Output HIGH voltage
VOH(Low)
|IOH|
≤ 0.1 mA
VDDQ
−0.2
VDDQ
V
3,4
VOH
Note1
VDDQ/2
−0.12
VDDQ/2+0.12
V
3,4
Output LOW voltage
VOL(Low)
IOL
≤ 0.1 mA
VSS
0.2
V
3,4
VOL
Note2
VDDQ/2
−0.12
VDDQ/2+0.12
V
3,4
Notes 1. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5)
±15% for values of 175 Ω ≤ RQ ≤ 350 Ω.
2. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5)
±15% for values of 175 Ω ≤ RQ ≤ 350 Ω.
3. AC load current is higher than the shown DC values.
4. HSTL outputs meet JEDEC HSTL Class I standards.



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