TMS320DM641 datasheet(112/171 Pages) TI

112 / 171 page

External Memory Interface (EMIIF)

112

June 2003 − Revised August 2004

SPRS222C

AECLKOUTx

ACEx

ABE[3:0]

AEA[22:3]

AED[31:0]

AARE/ASDCAS/ASADS/

ASRE§

AAOE/ASDRAS/ASOE§

AAWE/ASDWE/ASWE§

BE1

BE2

BE3

BE4

EA1

EA2

EA3

EA4

Write

Latency =

1‡

† The write latency and the length of ACEx assertion are programmable via the SYNCWL and CEEXT fields, respectively, in the EMIFA CE Space

Secondary Control register (CExSEC). In this figure, SYNCWL = 1 and CEEXT = 0.

‡ The following parameters are programmable via the EMIF CE Space Secondary Control register (CExSEC):

− Read latency (SYNCRL): 0-, 1-, 2-, or 3-cycle read latency

− Write latency (SYNCWL): 0-, 1-, 2-, or 3-cycle write latency

− ACEx assertion length (CEEXT): For standard SBSRAM or ZBT SRAM interface, ACEx goes inactive after the final command has been issued

(CEEXT = 0). For synchronous FIFO interface with glue, ACEx is active when ASOE is active (CEEXT = 1).

− Function of ASADS/ASRE (RENEN): For standard SBSRAM or ZBT SRAM interface, ASADS/ASRE acts as ASADS with deselect cycles

(RENEN = 0). For FIFO interface, ASADS/ASRE acts as ASRE with NO deselect cycles (RENEN = 1).

− Synchronization clock (SNCCLK): Synchronized to ECLKOUT1 or ECLKOUT2

§ AARE/ASDCAS/ASADS/ASRE, AAOE/ASDRAS/ASOE, and AAWE/ASDWE/ASWE operate as ASADS/ASRE, ASOE, and ASWE,

respectively, during programmable synchronous interface accesses.

Figure 4−21. Programmable Synchronous Interface Write Timing for EMIFA

(With Write Latency = 1)†‡

TMS320DM641 데이터시트(PDF) 112 Page - Texas Instruments