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STM32L081CB 데이터시트(PDF) 53 Page - STMicroelectronics |
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STM32L081CB 데이터시트(HTML) 53 Page - STMicroelectronics |
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53 / 110 page ![]() DocID027513 Rev 4 53/110 STM32L081xx Electrical characteristics 95 2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). Table 27. Current consumption in Run mode vs code type, code with data processing running from RAM(1) Symbol Parameter Conditions fHCLK Typ Unit IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash memory switched off fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL on)(2) Range 3, VCORE=1.2 V, VOS[1:0]=11 Dhrystone 4 MHz 570 µA CoreMark 670 Fibonacci 410 while(1) 375 Range 1, VCORE=1.8 V, VOS[1:0]=01 Dhrystone 32 MHz 6,65 mA CoreMark 6,95 Fibonacci 5,9 while(1) 5,2 1. Guaranteed by characterization results, unless otherwise specified. 2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). |
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