STM32L081CB datasheet(71/110 Pages) STMICROELECTRONICS

71 / 110 page

DocID027513 Rev 4

71/110

STM32L081xx

Electrical characteristics

6.3.8

PLL characteristics

The parameters given in Table 44 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 20.

6.3.9

Memory characteristics

RAM memory

Flash memory and data EEPROM

Table 44. PLL characteristics

Symbol

Parameter

Value

Unit

Min

Typ

Max(1)

1. Guaranteed by characterization results.

fPLL_IN

PLL input clock(2)

2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

MHz

PLL input clock duty cycle

fPLL_OUT

PLL output clock

MHz

tLOCK

PLL input = 16 MHz

PLL VCO = 96 MHz

115

160

µs

Jitter

Cycle-to-cycle jitter

 600

IDDA(PLL)

Current consumption on VDDA

220

450

µA

IDD(PLL)

Current consumption on VDD

120

150

Table 45. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode(1)

1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware

registers (only in Stop mode).

STOP mode (or RESET)

1.65

Table 46. Flash memory and data EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

Unit

VDD

Operating voltage

Read / Write / Erase

-1.65

3.6

tprog

Programming time for

word or half-page

Erasing

3.28

3.94

Programming

3.28

3.94

STM32L081CB 데이터시트(PDF) 71 Page - STMicroelectronics

STM32L081CB 데이터시트(HTML) 71 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL