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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32L081CB 데이터시트(PDF) 51 Page - STMicroelectronics |
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STM32L081CB 데이터시트(HTML) 51 Page - STMicroelectronics |
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51 / 110 page  DocID027513 Rev 4 51/110 STM32L081xx Electrical characteristics 95 Figure 11. IDD vs VDD, at TA= 25/55/85/105 °C, Run mode, code running from Flash memory, Range 2, HSE, 1WS Table 25. Current consumption in Run mode vs code type, code with data processing running from Flash memory Symbol Parameter Conditions fHCLK Typ Unit IDD (Run from Flash memory) Supply current in Run mode, code executed from Flash memory fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL on)(1) Range 3, VCORE=1.2 V, VOS[1:0]=11 Dhrystone 4 MHz 650 µA CoreMark 655 Fibonacci 485 while(1) 385 while(1), 1WS, prefetch off 375 Range 1, VCORE=1.8 V, VOS[1:0]=01 Dhrystone 32 MHz 6,65 mA CoreMark 6,9 Fibonacci 6,75 while(1) 5,8 while(1), prefetch off 5,5 1. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). |
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