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STM32L081CB 데이터시트(PDF) 50 Page - STMicroelectronics |
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STM32L081CB 데이터시트(HTML) 50 Page - STMicroelectronics |
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50 / 110 page ![]() Electrical characteristics STM32L081xx 50/110 DocID027513 Rev 4 Table 24. Current consumption in Run mode, code with data processing running from Flash memory Symbol Parameter Condition fHCLK (MHz) Typ Max(1) Unit IDD (Run from Flash memory) Supply current in Run mode code executed from Flash memory fHSE = fHCLK up to 16MHz included, fHSE = fHCLK/2 above 16 MHz (PLL ON)(2) Range3, Vcore=1.2 V VOS[1:0]=11 1 190 250 µA 2 345 380 4 650 670 Range2, Vcore=1.5 V VOS[1:0]=10 4 0,8 0,86 mA 8 1,55 1,7 16 2,95 3,1 Range1, Vcore=1.8 V VOS[1:0]=01 81,9 2,1 16 3,55 3,8 32 6,65 7,2 MSI clock source Range3, Vcore=1.2 V VOS[1:0]=11 0,065 39 130 µA 0,524 115 210 4,2 700 770 HSI clock source (16MHz) Range2, Vcore=1.5 V VOS[1:0]=10 16 2,9 3,2 mA Range1, Vcore=1.8 V VOS[1:0]=01 32 7,15 7,4 1. Guaranteed by characterization results at 125 °C, unless otherwise specified. 2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). |
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