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SPC564A80L7 데이터시트(PDF) 88 Page - STMicroelectronics

부품명 SPC564A80L7
상세설명  Up to 4 multiply and accumulate operations per cycle
PDF  157 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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SPC564A80L7 데이터시트(HTML) 88 Page - STMicroelectronics

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Electrical characteristics
SPC564A74L7, SPC564A80B4, SPC564A80L7
88/157
Doc ID 15399 Rev 9
3.4
EMI (electromagnetic interference) characteristics
3.5
Electrostatic discharge (ESD) characteristics
Table 13.
EMI Testing Specifications(1)
Symbol
Parameter
Conditions
Clocks
Frequency
Range
Level
(Max)
Unit
Radiated
emissions,
electric field
VRE_TEM
VDDREG =5.25V;
TA =25°C
150 kHz – 30 MHz
RBW 9 kHz, Step
Size 5 kHz
30 MHz – 1 GHz -
RBW 120 kHz,
Step Size 80 kHz
16 MHz crystal
40 MHz bus
No PLL frequency
modulation
150 kHz – 50
MHz
20
dB
V
50 – 150 MHz
20
150 – 500 MHz
26
500 – 1000 MHz
26
IEC Level
K
—
SAE Level
3
—
16 MHz crystal
40 MHz bus
± 2% PLL
frequency
modulation
150 kHz– 50
MHz
13
dB
V
50 – 150 MHz
13
150 – 500 MHz
11
500 – 1000 MHz
13
IEC Level
L
—
SAE Level
2
—
1.
EMI testing and I/O port waveforms per SAE J1752/3 issued 1995-03 and IEC 61967-2.
Table 14.
ESD ratings(1),(2)
Symbol
Parameter
Conditions
Value
Unit
—
SR
ESD for Human Body Model (HBM)
—
2000
V
R1
SR
HBM circuit description
—
1500
C
SR
—
100
pF
—SR
ESD for field induced charge Model
(FDCM)
All pins
500
V
Corner pins
750
—
SR
Number of pulses per pin
Positive pulses (HBM)
1
—
Negative pulses (HBM)
1
—
—
SR
Number of pulses
—
1
—
1.
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
2.
Device failure is defined as: “If after exposure to ESD pulses, the device does not meet the device specification
requirements, which includes the complete DC parametric and functional testing at room temperature and hot
temperature.”



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