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STM8L151X6 데이터시트(PDF) 97 Page - STMicroelectronics

부품명 STM8L151X6
상세설명  Operating conditions
PDF  146 Pages
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STM8L151X6 데이터시트(HTML) 97 Page - STMicroelectronics

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STM8L151x6/8 STM8L152x6/8
Electrical parameters
123
Table 38. I/O static characteristics
Symbol
Parameter
Conditions(1)
Min.
Typ.
Max.
Unit
VIL
Input low level voltage(2)
Input voltage on true
open-drain pins (PC0
and PC1)
VSS-0.3
-
0.3 x VDD
V
Input voltage on five-
volt tolerant (FT) pins
VSS-0.3
-
0.3 x VDD
Input voltage on any
other pin
VSS-0.3
-
0.3 x VDD
VIH
Input high level voltage (2)
Input voltage on true
open-drain pins (PC0
and PC1)
with VDD < 2 V
0.70 x VDD
-5.2
V
Input voltage on true
open-drain pins (PC0
and PC1)
with VDD ≥ 2 V
-5.5
Input voltage on five-
volt tolerant (FT) pins
with VDD < 2 V
0.70 x VDD
-5.2
Input voltage on five-
volt tolerant (FT) pins
with VDD ≥ 2 V
-5.5
Input voltage on any
other pin
0.70 x VDD
-
VDD+0.3
Vhys
Schmitt trigger voltage hysteresis (3)
Standard I/Os
-
200
-
mV
True open drain I/Os
-
200
-
Ilkg
Input leakage current (4)
VSS≤VIN≤VDD
Standard I/Os
--
50 (5)
nA
VSS≤VIN≤VDD
True open drain I/Os
-
-
200(5)
VSS≤VIN≤VDD
PA0 with high sink LED
driver capability
-
-
200(5)
RPU
Weak pull-up equivalent
resistor(2)(6)
VIN=VSS
30
45
60
k
Ω
CIO
I/O pin capacitance
-
-
5
-
pF
1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
2. Data based on characterization results.
3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4. The max. value may be exceeded if negative current is injected on adjacent pins.
5. Not tested in production.
6. RPU pull-up equivalent resistor based on a resistive transistor (corresponding IPU current characteristics described in
Figure 29).



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