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AS4C64M8D2 데이터시트(PDF) 53 Page - Alliance Semiconductor Corporation |
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AS4C64M8D2 데이터시트(HTML) 53 Page - Alliance Semiconductor Corporation |
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53 / 59 page ![]() AS4C64M8D2 Confidential 53 Rev. 1.0 Feb. /2014 Figure 47. CKE intensive environment CK# CKE tCKE NOTE: The pattern shown above can repeat over a long period of time. With this pattern, DRAM guarantees all AC and DC timing & voltage specifications and DLL operation with temperature and voltage drift CK tCKE tCKE tCKE tXP tXP tREFI REF REF CMD Figure 48. Read to power-down entry CK# CMD BL=4 T0 T2 Tx Tx+1 Tx+2 Tx+3 Tx+4 Tx+5 Tx+6 Tx+7 T1 Tx+8 Tx+9 RD Q AL+CL Read operation starts with a read command and DQS CKE CK DQS# CKE should be kept HIGH until the end of burst operation tIS Q Q Q DQ CK# CMD BL=8 T0 T2 Tx Tx+1 Tx+2 Tx+3 Tx+4 Tx+5 Tx+6 Tx+7 T1 Tx+8 Tx+9 RD Q AL+CL DQS CKE CK DQS# CKE should be kept HIGH until the end of burst operation tIS Q Q Q DQ Q Q Q Q |
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