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STM32H723VG 데이터시트(PDF) 150 Page - STMicroelectronics |
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STM32H723VG 데이터시트(HTML) 150 Page - STMicroelectronics |
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150 / 227 page ![]() Electrical characteristics STM32H723xE/G 150/227 DS13313 Rev 2 6.3.19 Octo-SPI interface characteristics Unless otherwise specified, the parameters given in Table 75 and Table 77 for OCTOSPI are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage conditions summarized in Table 12: General operating conditions, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 11 • Measurement points are done at CMOS levels: 0.5VDD • IO Compensation cell activated. • HSLV activated when VDD ≤ 2.5 V • VOS level set to VOS0 Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate function characteristics. Table 74. LPSDR SDRAM Write timings(1) 1. Guaranteed by characterization results. Symbol Parameter Min Max Unit tw(SDCLK) FMC_SDCLK period 2Tfmc_ker_ck – 0.5 2Tfmc_ker_ck+0.5 ns td(SDCLKL _Data) Data output valid time - 2 th(SDCLKL _Data) Data output hold time 0 - td(SDCLKL_Add) Address valid time - 2.5 td(SDCLKL-SDNWE) SDNWE valid time - 2 th(SDCLKL-SDNWE) SDNWE hold time 0 - td(SDCLKL- SDNE) Chip select valid time - 1.5(2)(3) 2. Using PC2 I/O adds 4 ns to this timing. 3. Using PC2_C I/O adds 16.5 ns to this timing. th(SDCLKL- SDNE) Chip select hold time 0 - td(SDCLKL-SDNRAS) SDNRAS valid time - 1 th(SDCLKL-SDNRAS) SDNRAS hold time 0 - td(SDCLKL-SDNCAS) SDNCAS valid time - 2 td(SDCLKL-SDNCAS) SDNCAS hold time 0.5 - Table 75. OCTOSPI characteristics in SDR mode(1)(2) Symbol Parameter Conditions Min Typ Max Unit F(CLK) OCTOSPI clock frequency 1.71 V < VDD < 3.6 V, VOS0, CLOAD = 15 pF -- 92 MHz 1.71 V < VDD < 3.6 V, VOS0, CLOAD =20 pF -- 90 2.7 V < VDD < 3.6 V, VOS0, CLOAD = 20 pF - - 140 |
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