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STM32H723VG 데이터시트(PDF) 195 Page - STMicroelectronics |
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STM32H723VG 데이터시트(HTML) 195 Page - STMicroelectronics |
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195 / 227 page ![]() DS13313 Rev 2 195/227 STM32H723xE/G Electrical characteristics 208 I2S Interface characteristics Unless otherwise specified, the parameters given in Table 108 for I2S are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 12: General operating conditions, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 11 • Capacitive load CL = 30 pF • Measurement points are done at CMOS levels: 0.5VDD • IO Compensation cell activated. • HSLV activated when VDD ≤ 2.7 V • VOS level set to VOS0 Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate function characteristics (CK,SD,WS). Table 108. I2S dynamic characteristics(1) 1. Guaranteed by characterization results. Symbol Parameter Conditions Min Max Unit fMCK I2S main clock output -- 50 MHz Master transmitter - 50/40(2) 2. This value is obtained when PA9 or PA12 are used. Master receiver - 50/40(2) Slave transmitter - 41.5/31(3) 3. This value is obtained when PC2 is used. Slave receiver - 50 tv(WS) WS valid time Master mode -2/6(4) 4. This value is obtained when PA11 or PA15 are used. ns th(WS) WS hold time 1 - tsu(WS) WS setup time Slave mode 3- th(WS) WS hold time 1 - tsu(SD_MR) Data input setup time Master receiver 2.5 - tsu(SD_SR) Slave receiver 1 - th(SD_MR) Data input hold time Master receiver 3 - th(SD_SR) Slave receiver 1.5 - tv(SD_ST) Data output valid time Slave transmitter (after enable edge) - 12/16(3) tv(SD_MT) Master transmitter (after enable edge) -2/6(5) th(SD_ST) Data output hold time Slave transmitter (after enable edge) 6.5 - th(SD_MT) Master transmitter (after enable edge) 0.5 - |
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