HCS08 datasheet(54/374 Pages) NXP

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Chapter 4 Memory

MC9S08JM60 Series Data Sheet, Rev. 5

Freescale Semiconductor

4.5.4

Burst Program Execution

The burst program command is used to program sequential bytes of data in less time than would be

required using the standard program command. This is possible because the high voltage to the flash array

does not need to be disabled between program operations. Ordinarily, when a program or erase command

is issued, an internal charge pump associated with the flash memory must be enabled to supply high

voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst

program command is issued, the charge pump is enabled and then remains enabled after completion of the

burst program operation if these two conditions are met:

•

The next burst program command has been queued before the current program operation has

completed.

•

The next sequential address selects a byte on the same physical row as the current byte being

programmed. A row of flash memory consists of 64 bytes. A byte within a row is selected by

addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.

The first byte of a series of sequential bytes being programmed in burst mode will take the same amount

of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst

program time provided that the conditions above are met. In the case the next sequential address is the

beginning of a new row, the program time for that byte will be the standard time instead of the burst time.

This is because the high voltage to the array must be disabled and then enabled again. If a new burst

command has not been queued before the current command completes, then the charge pump will be

disabled and high voltage removed from the array.

HCS08 데이터시트(PDF) 54 Page - NXP Semiconductors