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AT25QL641 데이터시트(PDF) 34 Page - Dialog Semiconductor

부품명 AT25QL641
상세설명  64-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
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AT25QL641
DS-25QL641–130E–10/2018
Figure 7-25. Quad Page Program Instruction (QPI mode)
7.17
4 Kbyte Block Erase (20h)
The ‘Block Erase’ instruction is to erase the data of the selected block as being “1”. The instruction is used for 4K-byte
block. Prior to the ‘Block Erase’ instruction, the ‘Write Enable’ (06h) instruction must be issued. The instruction is
initiated by driving the CS pin low and shifting the instruction code “20h” followed a 24-bit block address (A23-A0) as
shown in Figure 7-26 and Figure 7-27. The CS pin must go high after the eighth bit of the last byte has been latched in,
otherwise the Block Erase instruction is not executed. After CS goes high, the self-timed ‘Block Erase’ instruction
commences for a time duration of t
SE (see Table 8-7, AC Electrical Characteristics).
While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be accessed for
checking the status of the BUSY bit. The BUSY bit is a 1 during the block erase operation and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0.
Figure 7-26. Block Erase Instruction (SPI Mode)



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