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AT25QL641 데이터시트(PDF) 35 Page - Dialog Semiconductor

부품명 AT25QL641
상세설명  64-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
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AT25QL641
DS-25QL641–130E–10/2018
Figure 7-27. Block Erase Instruction (QPI Mode)
7.18
32 Kbyte Block Erase (52h)
The 32 KB ‘Block Erase’ instruction is used for a 32 Kbyte block erase operation. Prior to the ‘Block Erase’ Instruction,
a ‘Write Enable’ (06h) instruction must be issued. The instruction is initiated by driving the CS pin low and shifting the
instruction code “52h” followed a 24-bit block address (A23-A0). Refer to Figure 7-28 and Figure 7-29 below. The CS
pin must go high after the eighth bit of the last byte has been latched in, otherwise the Block Erase instruction is not
executed. After CS is driven high, the self-timed Block Erase instruction commences for a time duration of tBE1 (see Table
8-7, AC Electrical Characteristics
).
While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be used to read the
status of the BUSY bit. The BUSY bit is a 1 during the block erase operation and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0.
Figure 7-28. 32KB Block Erase Instruction (SPI Mode)



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