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AT25QL641 데이터시트(PDF) 35 Page - Dialog Semiconductor |
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AT25QL641 데이터시트(HTML) 35 Page - Dialog Semiconductor |
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35 / 77 page ![]() 34 AT25QL641 DS-25QL641–130E–10/2018 Figure 7-27. Block Erase Instruction (QPI Mode) 7.18 32 Kbyte Block Erase (52h) The 32 KB ‘Block Erase’ instruction is used for a 32 Kbyte block erase operation. Prior to the ‘Block Erase’ Instruction, a ‘Write Enable’ (06h) instruction must be issued. The instruction is initiated by driving the CS pin low and shifting the instruction code “52h” followed a 24-bit block address (A23-A0). Refer to Figure 7-28 and Figure 7-29 below. The CS pin must go high after the eighth bit of the last byte has been latched in, otherwise the Block Erase instruction is not executed. After CS is driven high, the self-timed Block Erase instruction commences for a time duration of tBE1 (see Table 8-7, AC Electrical Characteristics ). While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be used to read the status of the BUSY bit. The BUSY bit is a 1 during the block erase operation and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. Figure 7-28. 32KB Block Erase Instruction (SPI Mode) |
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