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STM32F730V8 데이터시트(PDF) 115 Page - STMicroelectronics |
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STM32F730V8 데이터시트(HTML) 115 Page - STMicroelectronics |
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115 / 202 page ![]() DS12536 Rev 2 115/202 STM32F730x8 Electrical characteristics 185 6.3.9 External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The external clock signal has to respect the Table 61: I/O static characteristics. However, the recommended clock input waveform is shown in Figure 28. The characteristics given in Table 38 result from tests performed using an high-speed external clock source, and under ambient temperature and supply voltage conditions summarized in Table 16. tWUSTOP(2) Wakeup from Stop mode with MR/LP regulator in Under-drive mode Main regulator in under-drive mode (Flash memory in Deep power-down mode) 107.4 113.2 µs Low power regulator in under-drive mode (Flash memory in Deep power-down mode) 112.7 120 tWUSTDBY(2) Wakeup from Standby mode Exit Standby mode on rising edge 308 313 µs Exit Standby mode on falling edge 307 313 1. Guaranteed by characterization results. 2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first Table 37. Low-power mode wakeup timings (continued) Symbol Parameter Conditions Typ(1) Max(1) Unit Table 38. High-speed external user clock characteristics Symbol Parameter Conditions Min Typ Max Unit fHSE_ext External user clock source frequency(1) - 1- 50 MHz VHSEH OSC_IN input pin high level voltage 0.7VDD -VDD V VHSEL OSC_IN input pin low level voltage VSS -0.3VDD tw(HSE) tw(HSE) OSC_IN high or low time(1) 1. Guaranteed by design. 5- - ns tr(HSE) tf(HSE) OSC_IN rise or fall time(1) -- 10 Cin(HSE) OSC_IN input capacitance(1) -- 5 - pF DuCy(HSE) Duty cycle - 45 - 55 % IL OSC_IN Input leakage current VSS ≤ VIN ≤ VDD -- ±1 µA |
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