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STM8S103F2 데이터시트(PDF) 84 Page - STMicroelectronics |
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STM8S103F2 데이터시트(HTML) 84 Page - STMicroelectronics |
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84 / 121 page ![]() Electrical characteristics STM8S103F2 STM8S103F3 STM8S103K3 84/121 DocID15441 Rev 14 Figure 43. ADC accuracy characteristics 1. Example of an actual transfer curve 2. The ideal transfer curve 3. End point correlation line ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer curves. EO = Offset error: deviation between the first actual transition and the first ideal one. EG = Gain error: deviation between the last ideal transition and the last actual one. ED = Differential linearity error: maximum deviation between actual steps and the ideal one. EL = Integral linearity error: maximum deviation between any actual transition and the end point correlation line. Table 47. ADC accuracy with RAIN< 10 kΩ, VDD= 3.3 V Symbol Parameter Conditions Typ Max(1) 1. Guaranteed by characterization results. Unit |ET| Total unadjusted error(2) 2. ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may potentially inject negative current. Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 10.3.6 does not affect the ADC accuracy. fADC = 2 MHz 1.6 3.5 LSB fADC = 4 MHz 1.9 4 |EO| Offset error(2) fADC = 2 MHz 12.5 fADC = 4 MHz 1.5 2.5 |EG| Gain error(2) fADC = 2 MHz 1.3 3 fADC = 4 MHz 23 |ED| Differential linearity error(2) fADC = 2 MHz 0.7 1.0 fADC = 4 MHz 0.7 1.5 |EL| Integral linearity error(2) fADC = 2 MHz 0.6 1.5 fADC = 4 MHz 0.8 2 EO EG 1LSBIDEAL 1LSBIDEAL VDD VSS – 1024 -------------------------------- = 1023 1022 1021 5 4 3 2 1 0 7 6 1 234 567 1021102210231024 (1) (2) ET ED EL (3) VDD VSS |
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