| 전자부품 데이터시트 검색엔진 |
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SH33F2801P/032PR 데이터시트(PDF) 34 Page - SINOWEALTH Electronic Ltd |
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SH33F2801P/032PR 데이터시트(HTML) 34 Page - SINOWEALTH Electronic Ltd |
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34 / 407 page ![]() SH33F2801 34 (b) Page Programming (1) Unlock Flash main block by writing the correct sequence of keys into FLASH_KEYR, and check that MNLCK@FLASH_CR is cleared. (2) Check that no Flash memory operation is ongoing by checking the BSY bit in the FLASH_SR register. (3) When the BSY@FLASH_SR bit is cleared, write the flash main program block command (MPG) word and program operation width selection bit to the FLASH_CR register. (4) Set STRT@FLASH_CR bit. (5) Write a 32-bit word/16-bit half-word into the desired address. (6) Check BSY@FLASH_SR bit to determine whether the programming instruction has been executed. (7) Repeat steps 3 to 6 until the operations are done. (8) The operation is done when BSY@FLASH_SR bit is cleared. (9) Set MNLCK@FLASH_CR bit to 1 to lock the block. Figure8-8 Main Program Block Programming (Continuous multi-word) |
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