M58PR512LE datasheet(67/119 Pages) STMICROELECTRONICS

부품명	M58PR512LE

상세설명	256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories

PDF	119 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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67 / 119 page

M58PR256LE, M58PR512LE, M58PR001LE

Program and erase times and endurance cycles

67/119

Erase

EFA block (4 KWord)

0.7

2.5

Main array block (128 KWord)

0.9

Program(3)

Single cell(4)

Word Program(5)

230

µs

Single word(4)

Word Program(5)

230

µs

Buffer Enhanced

Factory

Program(4)

4.2

µs

Buffer (512

words)

Buffer Program

2.15

4.3

Buffer Enhanced

Factory Program

2.15

Main block

(128 KWords)

Buffer Program

0.55

1.1

Buffer Enhanced

Factory Program

0.55

EFA block (4 KWords)

0.2

0.94

Program/Erase

cycles (per block)

Main array block (128 KWords)

100 000

cycles

EFA block (4 KWords)

100 000

Blank Check

Main array block

3.2

TA = –30 to 85 °C; VDD = 1.7 V to 2 V; VDDQ = 1.7 V to 2 V.

Values are liable to change with the external system-level overhead (command sequence and Status

Excludes the time needed to execute the command sequence.

This is an average value on the entire device.

The first Word Program in a program region will take 115 µs, the subsequent words will take 50 µs to

program.

Table 23.

Program/erase times and endurance cycles(1) (2) (continued)

Parameter

Condition

Min

Typ

Typical after

100 kW/E

cycles

Max

Unit

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