M58PR512LE datasheet(95/119 Pages) STMICROELECTRONICS

부품명	M58PR512LE

상세설명	256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories

PDF	119 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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95 / 119 page

M58PR256LE, M58PR512LE, M58PR001LE

Common Flash interface

95/119

Table 45.

Device geometry definition

Offset

Data

Description

Value

027h

0019h

M58PR256LE device size = 2n in number of bytes

32 Mbytes

001Ah

M58PR512LE device size = 2n in number of bytes

64 Mbytes

001Bh

M58PR001LE device size = 2n in number of bytes

128 Mbytes

028h

029h

0001h

0000h

Flash device interface code description

x16

Async.

02Ah

02Bh

000Ah

0000h

Maximum number of bytes in multi-byte program or page = 2n

1024 bytes

02Ch

0001h

Number of identical sized erase block regions within the device

bit 7 to 0 = x = number of Erase block regions

02Dh

02Eh

007Fh

0000h

M58PR256LE erase block region 1 information

Number of identical-size erase blocks = 007Fh+1

127

00FFh

0000h

M58PR512LE erase block region 1 information

Number of identical-size erase blocks = 00FFh+1

255

01FFh

0000h

M58PR001LE erase block region 1 information

Number of identical-size erase blocks = 01FFh+1

511

02Fh

030h

0000h

0004h

Erase block region 1 information

Block size in region 1 = 0400h * 256 byte

256 Kbyte

031h

038h

Reserved Reserved for future erase block region information

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